中紅外超級LED21系列l(wèi)ed215led218波長2.13-2.16um2.17-2.19um開關(guān)時間30ns使用溫度-240度至50度TO-18封裝LightEmittingDiodeswithcentralwavelengthMIDIRLED-PR2,15mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength2,18mmseriesarebasedonheterostructuresgrownonGaSbsubstratesbyLPE.SolidsolutionsGaInAsSbareusedintheactivelayer.WidebandgapsolidsolutionsAlGaAsSbwithAlcontent64%areusedforgoodelectronconfinement.
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